investigation of ZnSe buffer layers for reduction of defects in heteroepitaxial growth of GaAs on silicon
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investigation of ZnSe buffer layers for reduction of defects in heteroepitaxial growth of GaAs on silicon by Daniel Anthony Huber

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Published .
Written in English

Subjects:

  • Gallium arsenide semiconductors -- Defects.,
  • Gallium arsenide semiconductors -- Design and construction.,
  • Epitaxy.,
  • Silicon.,
  • Zinc selenide.

Book details:

Edition Notes

Statementby Daniel Anthony Huber.
The Physical Object
Paginationxii, 114 leaves, bound :
Number of Pages114
ID Numbers
Open LibraryOL16955151M

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